Damage-free and anisotropic magnetic tunneling junction etching by pulse-time-modulated plasma

研究成果: Article査読

抄録

We have developed a reactive ion etching (RIE) technique for high-performance and damage-free magnetic tunneling junction devices (MTJ) using pulse-time-modulated (TM) plasma. Exposing MTJ devices to the conventional continuous-wave (CW) plasma widely used in plasma etching significantly degrades their magnetic characteristics. We found that it was caused by damaging the structure of the CoFe pinned layer. Conversely, exposure to a TM plasma does not degrades the MTJ devices' characteristics. There-fore, manufacturing processes that incorporate TM plasmas hold promise as device fabrication processes for MRAM and other magnetic devices.

本文言語English
ページ(範囲)594-598
ページ数5
ジャーナルShinku/Journal of the Vacuum Society of Japan
51
9
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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