Czochralski growth of heavily tin-doped Si crystals

I. Yonenaga, T. Taishi, K. Inoue, R. Gotoh, K. Kutsukake, Y. Tokumoto, Y. Ohno

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Heavily tin (Sn)-doped Si crystals in a concentration up to 4×10 19 cm-3 were grown by the Czochralski method. Variation of Sn concentration in the crystals was well expressed by the Pfann equation using a segregation coefficient of k=0.016. From the occurrence of growth interface instability and the appearance of Sn precipitates in the grown crystals, the solubility limit of Sn was considered to be around 5×1019 cm-3. Interstitially dissolved oxygen Oi was presented at a concentration of 8-9×1017 cm-3 in the grown Sn-doped crystals. The FT-IR absorption peak relating to a Si-Oi-Si quasi-molecule at 1106 cm-1 showed preferential occupation of O i at the bond-centered position of Si-Si. The Oi peak shifted to the lower wave number side with increasing Sn concentration in Si, implying expansion of the Si-Si bond.

本文言語English
ページ(範囲)94-97
ページ数4
ジャーナルJournal of Crystal Growth
395
DOI
出版ステータスPublished - 2014 6 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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