Czochralski growth of GeSi bulk alloy crystals

I. Yonenaga

研究成果: Article査読

39 被引用数 (Scopus)

抄録

Bulk crystals of Ge1-xSix alloys of the composition range 0 < x < 1 were grown by the Czochralski method with the pulling rate 0.5-8 mm/h. Fully grown single crystals of large size were obtained with composition x < 0.15 and x > 0.85. Crystals with intermediate composition changed to polycrystalline due to the constitutional supercooling. The heteroseeding process by using an Si or Ge crystal was investigated in terms of solute segregation. By infra-red spectroscopy, a large number of oxygen atoms were deduced to be included in the grown alloys. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy are discussed.

本文言語English
ページ(範囲)404-408
ページ数5
ジャーナルJournal of Crystal Growth
198-199
PART I
DOI
出版ステータスPublished - 1999

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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