Czochralski growth of bulk crystals of Ge1-xSix alloys II. Si-rich alloys

I. Yonenaga, M. Nonaka

研究成果: Article査読

40 被引用数 (Scopus)

抄録

Bulk single crystals of Si-rich Ge1-xSix alloys of composition 0.86 < x < 1 were grown by the Czochralski method. Full single crystals of diameter and of length more than 20 and 50 mm, respectively, were obtained in variable composition 0.88 < x < 0.98 along the growth direction. The composition of the grown crystal was determined by means of energy dispersive X-ray (EDX) spectroscopy. By infrared spectroscopy, a large number of oxygen atoms are found to be included in the grown alloys. By X-ray topography, grown-in dislocations of Lomer type were observed to generate from the crystal habits. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy were discussed.

本文言語English
ページ(範囲)393-398
ページ数6
ジャーナルJournal of Crystal Growth
191
3
DOI
出版ステータスPublished - 1998 7月 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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