Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; Relationship between Al, Ga site occupancy and scintillation properties

Kei Kamada, Shunsuke Kurosawa, Petr Prusa, Martin Nikl, Vladimir V. Kochurikhin, Takanori Endo, Kousuke Tsutumi, Hiroki Sato, Yuui Yokota, Kazumasa Sugiyama, Akira Yoshikawa

研究成果: Article査読

97 被引用数 (Scopus)

抄録

2-in. size Ce 1%:Gd3(Al1- xGax)5O12 (GAGG) single crystals with various Ga concentration of x = 2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x = 2.4 sample showed best energy resolution of 4.2%@662 keV. The dependence of scintillation properties on crystal structure and Al-Ga was discussed.

本文言語English
ページ(範囲)1942-1945
ページ数4
ジャーナルOptical Materials
36
12
DOI
出版ステータスPublished - 2014 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

フィンガープリント 「Cz grown 2-in. size Ce:Gd<sub>3</sub>(Al,Ga)<sub>5</sub>O<sub>12</sub> single crystal; Relationship between Al, Ga site occupancy and scintillation properties」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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