@article{f44f0af985f84868b21e63bf706eb903,
title = "Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; Relationship between Al, Ga site occupancy and scintillation properties",
abstract = "2-in. size Ce 1%:Gd3(Al1- xGax)5O12 (GAGG) single crystals with various Ga concentration of x = 2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x = 2.4 sample showed best energy resolution of 4.2%@662 keV. The dependence of scintillation properties on crystal structure and Al-Ga was discussed.",
keywords = "Scintillator, Single crystal growth",
author = "Kei Kamada and Shunsuke Kurosawa and Petr Prusa and Martin Nikl and Kochurikhin, {Vladimir V.} and Takanori Endo and Kousuke Tsutumi and Hiroki Sato and Yuui Yokota and Kazumasa Sugiyama and Akira Yoshikawa",
note = "Funding Information: This work is partially supported by (i) the funding program for next generation world-leading researchers, JSPS , (ii) Development of Systems and Technology for Advanced Measurement and Analysis, Japan Science and Technology Agency (JST) (iii) Adaptable & Seamless Technology Transfer Program through Target-driven R&D (A-STEP), JST (iv) Japan Society for the Promotion of Science (JSPS) Grant-in-Aid for Exploratory Research (A.Y), (v) JSPS Research Fellowships for Young Scientists (S. Kurosawa) and (vi) the Health Labour Sciences Research Grant, The Ministry of Health Labour and Welfare . In addition, we would like to thank following persons for their support: Mr. Yoshihiro Nakamura in Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University and Mr. Hiroshi Uemura, Ms. Keiko Toguchi and Ms. Megumi Sasaki, Ms. Yuka Takeda in IMR.",
year = "2014",
month = oct,
doi = "10.1016/j.optmat.2014.04.001",
language = "English",
volume = "36",
pages = "1942--1945",
journal = "Optical Materials",
issn = "0925-3467",
publisher = "Elsevier",
number = "12",
}