Current transport in short channel top-contact pentacene field-effect transistors investigated with the selective molecular doping technique

F. Fujimori, K. Shigeto, T. Hamano, T. Minari, T. Miyadera, K. Tsukagoshi, Y. Aoyagi

研究成果: Article査読

61 被引用数 (Scopus)

抄録

The contact doping profile is controlled in the top-contact configuration to clarify a transistor operation based on a current injection process from the metal contact to the organic channel in a submicron channel pentacene field-effect transistor. The molecular doping in the pentacene film underneath the metal contact, in which a thin layer of iron (III) chloride was introduced, drastically changes transistor characteristics. The doping profile control directly revealed the resistive part for current injection. A model to explain the saturation behavior of the top-contact short channel organic transistor is presented.

本文言語English
論文番号193507
ジャーナルApplied Physics Letters
90
19
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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