Current status of single ion implantation

Takahiro Shinada, Yoshinori Kumura, Jun Okabe, Takashi Matsukawa, Iwao Ohdomari

研究成果: Article査読

31 被引用数 (Scopus)

抄録

The current status of single ion implantation (SII) which has been proposed as a novel technology to suppress the fluctuation in dopant number in fine semiconductor structures is reported. The key to control the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. By improving the SE detection system, we have achieved the efficiency of 90% which ensures the reduction in the fluctuation of dopant number to 30% compared to the conventional ion implantation. The improvement for the better SE detection efficiency has turned out to also be effective for the precise beam alignment. The single ion incident position can now be successfully controlled with an error of less than 0.3 μm.

本文言語English
ページ(範囲)2489-2493
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
16
4
DOI
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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