Current-injection terahertz lasing in distributed-feedback dual-gate graphene-channel field-effect transistor

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

研究成果: Conference contribution

抄録

A distributed-feedback (DFB) dual-gate graphene-channel transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with calculation based on DFB-Fabry-Perrot hybrid-mode modeling.

本文言語English
ホスト出版物のタイトル2016 Conference on Lasers and Electro-Optics, CLEO 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781943580118
出版ステータスPublished - 2016 12 16
イベント2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
継続期間: 2016 6 52016 6 10

出版物シリーズ

名前2016 Conference on Lasers and Electro-Optics, CLEO 2016

Other

Other2016 Conference on Lasers and Electro-Optics, CLEO 2016
国/地域United States
CitySan Jose
Period16/6/516/6/10

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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