Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor

G. Tamamushi, T. Watanabe, J. Mitsushio, A. A. Dubinov, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, T. Otsuji

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

This paper reviews recent advancement on the research toward graphene-based terahertz (THz) lasers. Optical and/ or injection pumping of graphene can enable negative-dynamic conductivity in the THz spectral range, which may lead to new types of THz lasers. A forward-biased graphene structure with a lateral p-i-n junction was implemented in a distributed-feedback (DFB) dual-gate graphene-channel FET and observed a single mode emission at 5.2 THz at 100K. The observed spectral linewidth fairly agrees with the modal gain analysis based on DFB-Fabry-Perrot hybrid-cavity-mode modeling. Although the results obtained are still preliminary level, the observed emission could be interpreted as THz lasing in population-inverted graphene by carrier-injection.

本文言語English
ホスト出版物のタイトルQuantum Sensing and Nano Electronics and Photonics XIV
編集者Manijeh Razeghi
出版社SPIE
ISBN(電子版)9781510606630
DOI
出版ステータスPublished - 2017
イベントQuantum Sensing and Nano Electronics and Photonics XIV 2017 - San Francisco, United States
継続期間: 2017 1 292017 2 2

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10111
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

Other

OtherQuantum Sensing and Nano Electronics and Photonics XIV 2017
国/地域United States
CitySan Francisco
Period17/1/2917/2/2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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