Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions

Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideo Ohno

研究成果: Article査読

168 被引用数 (Scopus)

抄録

Current-driven magnetization switching in low-resistance Co 40Fe40B20/MgO/Co40Fe 40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270 and 300°C are found to be as low as 7.8 × 105 and 8.8 × 105 A/cm2 with accompanying tunnel magnetoresistance (TMR) ratios of 49 and 73%, respectively. Further annealing of the samples at 350°C increases TMR ratio to 160%, while accompanying Jc increases to 2.5 × 106 A/cm2. We attribute the low Jc to the high spin-polarization of tunnel current and small MsV product of the CoFeB single free layer, where Ms is the saturation magnetization and V the volume of the free layer.

本文言語English
ページ(範囲)L1267-L1270
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
37-41
DOI
出版ステータスPublished - 2005 9 30

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

フィンガープリント

「Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル