Current-assisted domain wall motion in ferromagnetic semiconductors

Michihiko Yamanouchi, Daichi Chiba, Fumihiro Matsukura, Hideo Ohno

研究成果: Article

16 引用 (Scopus)

抜粋

We investigated the effect of electrical currents on magnetization reversal in ferromagnetic semiconductors. We fabricated a Hall bar-shaped device with a stepped channel from (Ga,Mn)As and that with a partially gated channel from (In,Mn)As. These structures realize in-plane patterning of coercivity H C and allow us to study the dynamics of domain walls under application of currents by monitoring the Hall resistance. In both devices, we show that there exists a region, where its HC is strongly influenced by the direction of the applied current. In addition, we demonstrate the current induced domain wall movement under a fixed magnetic field. These phenomena can be observed at current density of 104 A/cm2 lower. Possible mechanisms are discussed

元の言語English
ページ(範囲)3854-3859
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
発行部数5 A
DOI
出版物ステータスPublished - 2006 5 9

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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