Curie temperature versus hole concentration in field-effect structures of Ga1-x Mnx As

Y. Nishitani, D. Chiba, M. Endo, M. Sawicki, F. Matsukura, T. Dietl, H. Ohno

研究成果: Article

53 引用 (Scopus)

抜粋

The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an external electric field in a field-effect transistor configuration. It is found that TC ∼ pγ, where the exponent γ=0.19±0.02 over a wide range of Mn compositions and channel thicknesses. The magnitude of γ is reproduced by a p-d Zener model taking into account nonuniform hole distribution along the growth direction, determined by interface states and the applied gate electric fields.

元の言語English
記事番号045208
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
81
発行部数4
DOI
出版物ステータスPublished - 2010 1 27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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