CuAl2 thin films as a low-resistivity interconnect material for advanced semiconductor devices

研究成果: Article査読

10 被引用数 (Scopus)

抄録

New interconnect materials that have a low line resistivity are required to address issues associated with the increased resistivity due to the aggressive downscaling of future semiconductor devices. In this work, CuAl2 thin films are investigated as a potential material for liner- and barrier-free interconnect applications. The results show that CuAl2 blanket films adhere well to and do not undergo interdiffusion with SiO2, as well as having a favorable size effect of resistivity. Furthermore, the filling of CuAl2 in narrow low-k trenches is investigated, and an excellent gap-filling performance is registered. These features suggest that CuAl2 is a promising alternative to Cu that does not require any additional liner or barrier layers for feature sizes less than 10 nm.

本文言語English
論文番号031215
ジャーナルJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
37
3
DOI
出版ステータスPublished - 2019 5 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • プロセス化学およびプロセス工学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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