Crystallographic orientation dependent electrical characteristics of La2O3 MOS capacitors

H. Nakayama, K. Kakushima, P. Ahmet, E. Ikenaga, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Effect of substrate surface orientation on the properties of La 2O3 MOS capacitors was investigated. The dielectric-thickness dependence on FFB indicated that the (110) sample contains smaller amount of fixed charge than the other samples of (100) and (111). The EOT after post-metallization annealing also varied with the orientation: larger value for (111) than the other. The x-ray photoemission spectroscopy revealed that the growth of SiO2-rich silicate phase of low permittivity depends on the orientation and can change EOT. The results suggest that the (110) is preferable for small EOT and adequate FFB value when the interface-state density is significantly reduced.

本文言語English
ホスト出版物のタイトルECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
出版社Electrochemical Society Inc.
ページ339-345
ページ数7
6
ISBN(電子版)9781607680932
ISBN(印刷版)9781566777438
DOI
出版ステータスPublished - 2009
外部発表はい
イベント7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
継続期間: 2009 10 52009 10 7

出版物シリーズ

名前ECS Transactions
番号6
25
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
国/地域Austria
CityVienna
Period09/10/509/10/7

ASJC Scopus subject areas

  • 工学(全般)

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