@article{1ec4da92e2a94508ad715785c42bf7d2,
title = "Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals",
abstract = "The chemical and electronic-band structures of SiO2 /Si interfaces formed utilizing oxygen radicals were investigated by measuring angle-resolved photoelectron spectra arising from Si 2p and O1s core levels and a valence band with the same probing depth. We clarified that (1) the SiO 2 /Si interfaces formed exhibited an almost abrupt compositional transition, (2) the valence band offsets at the Si(111)/Si, Si(110)/Si, and Si(551)/Si interfaces are almost the same and are 0.07 eV smaller than that at the SiO2 /Si (100) interface.",
author = "T. Suwa and Akinobu Teramoto and Y. Kumagai and K. Abe and X. Li and Y. Nakao and M. Yamamoto and Y. Kato and T. Muro and T. Kinoshita and T. Ohmi and Takeo Hattori",
note = "Funding Information: This work was supported by the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) under a Grant-in-Aid for Specially Promoted Research (Grant No. 18002004) and a Grant-in-Aid for Scientific Research (B) (Grant No. 19360014). The synchrotron radiation experiments were performed at SPring-8 with the approval of JASRI as a part of the projects of Nanotechnology Support commissioned by the MEXT.",
year = "2010",
month = apr,
day = "26",
doi = "10.1063/1.3407515",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",
}