Crystallization of GeO2-SiC2 glass by poling with ArF-laser excitation

Syuji Matsumoto, Takumi Fujiwara, Motoshi Ohama, Akira J. Ikushima

研究成果: Article査読

16 被引用数 (Scopus)

抄録

We report on crystallization of 15.7GeO2·84.3SiO2 (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100 (mJ/cm2)/pulse, and the number of shots was 104. The crystallites that were observed in the glass were approximately 15-20 μm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ∼0.5 x 105 V/cm, beyond which crystallization occurred.

本文言語English
ページ(範囲)1404-1406
ページ数3
ジャーナルOptics Letters
24
20
DOI
出版ステータスPublished - 1999 10 15
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学

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