Crystallization-induced stress in phosphorus-doped amorphous silicon thin films

Hideo Miura, Noriaki Okamoto

研究成果: Article査読

12 被引用数 (Scopus)

抄録

The effect of phosphorus doping on the crystallization-induced stress of silicon thin films is investigated experimentally using a scanning laser microscope. Though the intrinsic stress of the phosphorus-doped amorphous silicon films and the crystallization-induced stress of the films do not change, regardless of the doped phosphorus concentration, the final residual stress of the film after full annealing depends on the phosphorus concentration. The final stress decreases by increasing the dopant concentration. In addition, phosphorus doping lowers the crystallization temperature of the amorphous silicon thin films. The existing phosphorus at the interface of the film and the base oxide film is found to change the crystallization mechanism and the magnitude of the stress developed.

本文言語English
ページ(範囲)4747-4749
ページ数3
ジャーナルJournal of Applied Physics
75
9
DOI
出版ステータスPublished - 1994
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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