Crystallization behavior and resistance change in eutectic Si 15Te 85 amorphous films

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Crystallization process and the corresponding electrical resistance change were investigated in eutectic Si 15Te 85 amorphous thin films. The Si 15Te 85 amorphous film showed two-stage crystallization process upon heating. In the first stage, the Si 15Te 85 amorphous crystallized into Te crystals at 175 °C. In the second stage, the residual amorphous phase crystallized into Si 2Te 3 crystals at above 300 °C accompanying the resistance drop. Before the second crystallization, the electrical resistance once increased in the temperature range of about 250-295 °C. This phenomenon can be explained by considering the formation of amorphous phase with a high electrical resistivity.

本文言語English
ページ(範囲)2128-2131
ページ数4
ジャーナルThin Solid Films
520
6
DOI
出版ステータスPublished - 2012 1 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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