Crystallization and reconstructive layer transformation of a-Si/Au multilayer thin films under a strong gravitational field

Yoichi Okamoto, Masami Aono, Hisashi Miyazaki, Yudai Ogata, Makoto Tokuda, Tamotsu Mashimo

研究成果: Conference contribution

抄録

There were still unclear questions in the new method that fabricate the high quality poly crystalline Si thin film from amorphous Si thin film with lower annealing temperature than conventional Si recrystallization temperature. In that recrystallization process, the recrystallization mechanism was generally explained by the MIC (Metal Induced Crystallization) of Au. In this paper, we have discussed the effects of film structure and strong gravity on recrystallization, by using conventional furnace and high-temperature ultracentrifuge furnace system. The five kinds of samples (two bilayered Si/Au thin films, two multilayered Si/Au thin films and trilayered Si/Au/Si thin film) and found the effects of structure and strong gravity. The best for crystallization was Au/Si multilayered thin film, which is almost finished to crystallize even at 673 K annealing. The strong gravity advanced and retreated the crystallization, depending to thin film structure.

本文言語English
ホスト出版物のタイトルDiffusion in Materials
編集者S.V. Divinski, N.A. Stolwijk, H. Bracht
出版社Trans Tech Publications Ltd
ページ156-163
ページ数8
363
ISBN(印刷版)9783038354277
DOI
出版ステータスPublished - 2015
外部発表はい
イベントInternational Conference on Diffusion in Materials, DIMAT 2014 - Munster, Germany
継続期間: 2014 8 172014 8 22

Other

OtherInternational Conference on Diffusion in Materials, DIMAT 2014
国/地域Germany
CityMunster
Period14/8/1714/8/22

ASJC Scopus subject areas

  • 放射線
  • 材料科学(全般)
  • 凝縮系物理学

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