TY - JOUR
T1 - Crystal phase-selective epitaxy of rutile and anatase Nb-doped TiO 2 films on a GaN template by the helicon-wave-excited-plasma sputtering epitaxy method
AU - Hazu, Kouji
AU - Fouda, Aly
AU - Nakayama, Tokuyuki
AU - Tanaka, Akikazu
AU - Chichibu, Shigefusa F.
PY - 2010/9/1
Y1 - 2010/9/1
N2 - Crystal phase-selective epitaxy of Nb-doped TiO2 (TiO 2:Nb) films on GaN is demonstrated using the helicon-wave-excited- plasma sputtering epitaxy method. On the clean (0001) GaN, rutile (100) TiO 2:Nb was grown regardless of growth temperature (Tg). On the (0001) GaN covered with a monolayer-thick (100) or (001) β-Ga 2O3, anatase (001) TiO2:Nb was grown with the in-plane relation 〈110〉TiO2 || 〈112̄0〉GaN under high Tg and low O2 partial pressure conditions. The transmittance between 450 and 900nm for the 200-nm-thick films was approximately 80%. Typical resistivity of the anatase TiO2:Nb/GaN heterostructure was as low as 3.6 × 10-4 ω.cm, due to the interfacial conduction.
AB - Crystal phase-selective epitaxy of Nb-doped TiO2 (TiO 2:Nb) films on GaN is demonstrated using the helicon-wave-excited- plasma sputtering epitaxy method. On the clean (0001) GaN, rutile (100) TiO 2:Nb was grown regardless of growth temperature (Tg). On the (0001) GaN covered with a monolayer-thick (100) or (001) β-Ga 2O3, anatase (001) TiO2:Nb was grown with the in-plane relation 〈110〉TiO2 || 〈112̄0〉GaN under high Tg and low O2 partial pressure conditions. The transmittance between 450 and 900nm for the 200-nm-thick films was approximately 80%. Typical resistivity of the anatase TiO2:Nb/GaN heterostructure was as low as 3.6 × 10-4 ω.cm, due to the interfacial conduction.
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U2 - 10.1143/APEX.3.091102
DO - 10.1143/APEX.3.091102
M3 - Article
AN - SCOPUS:77956759429
VL - 3
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 9
M1 - 091102
ER -