Crystal growth of Yb3+-doped oxide single crystals for scintillator application

Akira Yoshikawa, Martin Nikl, Hiraku Ogino, Jong Ho Lee, Tsuguo Fukuda

研究成果: Conference article査読

19 被引用数 (Scopus)

抄録

Long emission wavelength scintillators are strongly required from the viewpoint of the practical use of silicon photo-diode, which has higher resolution with lower cost compared with photo-multipllier. Among the various scintillator emission centers, we regard emission from Yb3+ charge-transitions state (CTS) as a candidate. In order to investigate proper hosts for Yb3+ CTS, the yttrium gallium garnet host and lutetium aluminum garnet host were studied. Transparent and crack-free heavily Yb-doped YGG, i.e. {Y1-xYbx}3[Ga]2(Ga)3O 12 (Yb: YGG, x = 0.15, 0.5, 1.0) and heavily Yb-doped LuAG, i.e. {Lu1-xYbx}3[Al]2(Al)3O 12 (Yb: LuAG, x = 0.15, 0.5, 1.0) single crystals could be grown by the Modified Pulling Down method with 〈111〉 orientation. Emission, excitation spectra and decay kinetics were measured for these crystals. The CT transition of Yb3+ in the yttrium gallium garnet host was discussed compared with the Yb3+ one in the lutetium aluminum garnet host.

本文言語English
ページ(範囲)94-99
ページ数6
ジャーナルJournal of Crystal Growth
250
1-2
DOI
出版ステータスPublished - 2003 3
イベントACCGE-14 - Seatle, WA, United States
継続期間: 2002 8 42002 8 9

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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