Crystal growth of GaN from Na-Ga melt in BN containers

Hisanori Yamane, Dai Kinno, Masahiko Shimada, Francis J. Disalvo

    研究成果: Article査読

    16 被引用数 (Scopus)

    抄録

    A melt of Na and Ga with various Ga contents was placed in a BN crucible and reacted at 650°C for 300 h with N2 generated from the decomposition of NaN3 in a sealed stainless-steel tube. At 0.25 and 0.45 Ga molar fractions (rGa=Ga/(Ga+Na)), GaN precipitated at the interface of the melt and gas phases, and on the wall and bottom of the crucible. Platelet single crystals with a maximum size of 2 mm grew at the inside of the interface layer. The precipitates on the wall and bottom consisted of hexagonal columnar crystals elongated along the c-axis direction. The size of these crystals was about 10-20 μm at rGa=0.25 and 50-100 μn at rGa = 0.45. The morphology of the precipitates observed by scanning electron microscopy suggested that the columnar GaN crystals grew from the melt phase. At rGa = 0.65 and 0.85, thin GaN microcrystalline layers partially covered the Na-Ga melt surface, but the formation of bulk GaN was not observed in the BN crucible.

    本文言語English
    ページ(範囲)925-929
    ページ数5
    ジャーナルJournal of the Ceramic Society of Japan
    107
    10
    DOI
    出版ステータスPublished - 1999

    ASJC Scopus subject areas

    • セラミックおよび複合材料
    • 化学 (全般)
    • 凝縮系物理学
    • 材料化学

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