Crystal growth of C60 thin films on layered substrates

Katsumi Tanigaki, Sadanori Kuroshima, Jun Ichi Fujita, Thomas W. Ebbesen

研究成果: Article査読

76 被引用数 (Scopus)

抄録

The process of the C60 thin film crystal growth on layered materials such as MoS2 and mica is studied in detail with a combination of atomic force microscopy (AFM) and reflection high-energy electron diffractometry, and is compared to that on alkali-halide (NaCl) substrates. AFM shows that a single crystal containing triangle-shaped grains of 1-2 μm size with a (111) surface terrace is grown on the MoS2 substrate over a large area through a layer-by-layer process, while the grains on mica are 200-400 nm in size and distribute with some disorder in the orientation. The epitaxial characteristics of the C60 crystal growth on these layered substrates are discussed in comparison with that on alkali-halides.

本文言語English
ページ(範囲)2351-2353
ページ数3
ジャーナルApplied Physics Letters
63
17
DOI
出版ステータスPublished - 1993
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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