Crystal growth of Cd1-x-yMnxHgyTe1-zSez by a zone-melt method using a pressurized cast ingot

K. Onodera, H. Ohba, H. Sato, S. Nagayama

研究成果: Conference article査読

抄録

II-VI diluted magnetic semiconductor of Cd1-x-yMnxHgyTe1-zSez crystal (0.1 < x, y < 0.3, 0 ≤ z ≤ ≤ 0.02) has a high Hg vapor pressure at a temperature of crystal growth from a melt and also has temperature-composition phase diagrams with a wide solid solution. A quenched polycrystal ingot starting from a stoichiometric Cd1-x-yMnxHgyTe1-zSez melt was scaled up to a large size (20 mm diameter by 30 mm length) using a high-pressure synthesizing furnace, where a sealed quartz ampoule is subject to a high external pressure of argon gas (e.g. 14.0 MPa at 1060°C). Using this quenched polycrystal ingot, a large oriented single crystal has been grown by the zone melt method (ZM) for the the first time. It has a large size (20 mm diameter by 25 mm length), low insertion loss (0.2 dB at 0.98 μm) and compositional uniformity both in the axial and radial directions.

本文言語English
ページ(範囲)154-158
ページ数5
ジャーナルJournal of Crystal Growth
214
DOI
出版ステータスPublished - 2000 6 2
外部発表はい
イベントThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
継続期間: 1999 11 11999 11 5

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「Crystal growth of Cd<sub>1-x-y</sub>Mn<sub>x</sub>Hg<sub>y</sub>Te<sub>1-z</sub>Se<sub>z</sub> by a zone-melt method using a pressurized cast ingot」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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