TY - JOUR
T1 - Crystal growth and temperature dependence of light output of Ce-doped (Gd, La, Y)2Si2O7 single crystals
AU - Horiai, Takahiko
AU - Kurosawa, Shunsuke
AU - Murakami, Rikito
AU - Shoji, Yasuhiro
AU - Pejchal, Jan
AU - Yamaji, Akihiro
AU - Ohashi, Yuji
AU - Kamada, Kei
AU - Yokota, Yuui
AU - Ishizu, Tomohiro
AU - Ohishi, Yasuo
AU - Nakaya, Taisuke
AU - Yoshikawa, Akira
N1 - Funding Information:
This work is partially supported by (1) Japan Society for the Promotion of Science (JSPS) KAKENHI Grant Number 14462961(26420673), 15597934(15K13478), 15619740(15K18209), 17H05190, 16818695(16H06633), 17J03074 (by Grant-in-Aid for Young Scientists(B), Grant-in-Aid for JSPS Research Fellow, etc., S. Kurosawa, A. Yamaji, T. Horiai), (2) Leading Initiative for Excellent Young Researchers (LEADER), MEXT, Grant Number 16809648, (3) Bilateral AS CR-JSPS Joint Research Project, (4) Japan Science and Technology Agency (JST), Adaptable & Seamless Technology Transfer Program through Target-driven R&D (A-STEP), Grant Number AS272I010c(15667421), (5) the Association for the Progress of New Chemical Technology, (6) The Murata Science Foundation, (7) Nippon Sheet Glass Foundation for Materials Science and Engineering, (8) Tonen General Sekiyu Foundation, (9) Yazaki Memorial Foundation for Science and Technology, (10) Tokin Science and Technology Promotion Foundation, (11) Intelligent cosmos research institute, (12) Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, (13) International Collaboration Center Institute for Materials Research (ICC-IMR), Tohoku University and (14) Foundation for Promotion of Material Science and Technology of Japan. In addition, we would like to thank following persons for their support: Mr. Yoshihiro Nakamura of Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University and Mr. Yoshihiro Murakami, Mr. Hiroshi Uemura, Ms. Keiko Toguchi, Ms. Megumi Sasaki, Ms. Yuka Takeda and Ms. Kuniko Kawaguchi of IMR, Tohoku University.
Funding Information:
This work is partially supported by (1) Japan Society for the Promotion of Science (JSPS) KAKENHI Grant Number 14462961(26420673) , 15597934(15K13478) , 15619740(15K18209) , 17H05190 , 16818695(16H06633) , 17J03074 (by Grant-in-Aid for Young Scientists(B), Grant-in-Aid for JSPS Research Fellow, etc., S. Kurosawa, A. Yamaji, T. Horiai), (2) Leading Initiative for Excellent Young Researchers (LEADER), MEXT , Grant Number 16809648 , (3) Bilateral AS CR-JSPS Joint Research Project, (4) Japan Science and Technology Agency (JST), Adaptable & Seamless Technology Transfer Program through Target-driven R&D (A-STEP), Grant Number AS272I010c(15667421) , (5) the Association for the Progress of New Chemical Technology , (6) The Murata Science Foundation , (7) Nippon Sheet Glass Foundation for Materials Science and Engineering , (8) Tonen General Sekiyu Foundation , (9) Yazaki Memorial Foundation for Science and Technology , (10) Tokin Science and Technology Promotion Foundation , (11) Intelligent cosmos research institute , (12) Frontier Research Institute for Interdisciplinary Sciences, Tohoku University , (13) International Collaboration Center Institute for Materials Research (ICC-IMR) , Tohoku University and (14) Foundation for Promotion of Material Science and Technology of Japan . In addition, we would like to thank following persons for their support: Mr. Yoshihiro Nakamura of Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University and Mr. Yoshihiro Murakami, Mr. Hiroshi Uemura, Ms. Keiko Toguchi, Ms. Megumi Sasaki, Ms. Yuka Takeda and Ms. Kuniko Kawaguchi of IMR, Tohoku University.
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2018/3/15
Y1 - 2018/3/15
N2 - Ce-doped (Gd, La)2Si2O7 scintillation crystals are expected to be used as gamma-ray detectors for high temperature measurement. To realize scintillators for high temperature environment, we investigated (Ce0.01 Gd0.59−x La0.40 Yx)2Si2O7 (x = 0.00, 0.05, 0.10, 0.15) single crystals grown by the micro-pulling-down method. The results showed that a 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator can yield higher light output when compared with Y-free Ce-doped (Gd, La)2Si2O7 scintillator. The light outputs at 25°C and 175°C were determined to be ∼43,000 and ∼40,000 photons/MeV, respectively. Moreover, 1 inch size 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator was grown by the Czochralski technique, and its light output at 175°C kept the value of around 95% of the value at 25°C.
AB - Ce-doped (Gd, La)2Si2O7 scintillation crystals are expected to be used as gamma-ray detectors for high temperature measurement. To realize scintillators for high temperature environment, we investigated (Ce0.01 Gd0.59−x La0.40 Yx)2Si2O7 (x = 0.00, 0.05, 0.10, 0.15) single crystals grown by the micro-pulling-down method. The results showed that a 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator can yield higher light output when compared with Y-free Ce-doped (Gd, La)2Si2O7 scintillator. The light outputs at 25°C and 175°C were determined to be ∼43,000 and ∼40,000 photons/MeV, respectively. Moreover, 1 inch size 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator was grown by the Czochralski technique, and its light output at 175°C kept the value of around 95% of the value at 25°C.
KW - A2. Growth from melt
KW - B1. Oxides
KW - B2. Scintillator materials
KW - Seed crystals
KW - Single crystal growth
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U2 - 10.1016/j.jcrysgro.2018.01.016
DO - 10.1016/j.jcrysgro.2018.01.016
M3 - Article
AN - SCOPUS:85041543566
VL - 486
SP - 173
EP - 177
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -