Crystal growth and temperature dependence of light output of Ce-doped (Gd, La, Y)2Si2O7 single crystals

Takahiko Horiai, Shunsuke Kurosawa, Rikito Murakami, Yasuhiro Shoji, Jan Pejchal, Akihiro Yamaji, Yuji Ohashi, Kei Kamada, Yuui Yokota, Tomohiro Ishizu, Yasuo Ohishi, Taisuke Nakaya, Akira Yoshikawa

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Ce-doped (Gd, La)2Si2O7 scintillation crystals are expected to be used as gamma-ray detectors for high temperature measurement. To realize scintillators for high temperature environment, we investigated (Ce0.01 Gd0.59−x La0.40 Yx)2Si2O7 (x = 0.00, 0.05, 0.10, 0.15) single crystals grown by the micro-pulling-down method. The results showed that a 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator can yield higher light output when compared with Y-free Ce-doped (Gd, La)2Si2O7 scintillator. The light outputs at 25°C and 175°C were determined to be ∼43,000 and ∼40,000 photons/MeV, respectively. Moreover, 1 inch size 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator was grown by the Czochralski technique, and its light output at 175°C kept the value of around 95% of the value at 25°C.

本文言語English
ページ(範囲)173-177
ページ数5
ジャーナルJournal of Crystal Growth
486
DOI
出版ステータスPublished - 2018 3 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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