Crystal growth and piezoelectric properties of Ca3Ta(Ga1−x Scx)3Si2O14 single crystals

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Ca3Ta(Ga1-xScx)3Si2O14 (CTGSS) single crystals with various Sc concentrations (x = 0, 0.1, 0.2, 0.3, and 0.4) were grown by the micro-pulling-down method and their structure and chemical composition were evaluated. Through the powder X-ray diffraction (XRD) measurement and backscattered electron (BSE) imaging, it was demonstrated that all the CTGSS crystals with different Sc concentration were successfully grown as langasite-type structure although some secondary phases were observed for the crystals with x = 0.2, 0.3 and 0.4. Lattice parameters calculated from the powder XRD pattern generally increased with Sc substitution. Measured parameters for CTGSS crystal with x = 0.1 were larger permittivity ε11T0 and lower electromechanical coupling coefficient k12 and piezoelectric constant d11 than those for CTGS crystal with x = 0. It was also suggested that piezoelectric constant |d14| became larger due to the Sc substitution.

本文言語English
ページ(範囲)S136-S139
ジャーナルCeramics International
43
DOI
出版ステータスPublished - 2017 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • プロセス化学およびプロセス工学
  • 表面、皮膜および薄膜
  • 材料化学

フィンガープリント

「Crystal growth and piezoelectric properties of Ca<sub>3</sub>Ta(Ga<sub>1−x</sub> Sc<sub>x</sub>)<sub>3</sub>Si<sub>2</sub>O<sub>14</sub> single crystals」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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