Crystal growth and optical properties of Ce-doped (La,Y)2Si2O7 single crystal

Takahiko Horiai, Juraj Paterek, Jan Pejchal, Marketa Jarosova, Jan Rohlicek, Shunsuke Kurosawa, Takashi Hanada, Masao Yoshino, Akihiro Yamaji, Satoshi Toyoda, Hiroki Sato, Yuji Ohashi, Kei Kamada, Yuui Yokota, Akira Yoshikawa, Martin Nikl

研究成果: Article査読

抄録

We have grown Ce-doped (La,Y)2Si2O7 single crystal by micro-pulling-down method and investigated its optical and scintillation properties. We have successfully prepared the single crystal with (Ce0.015La0.600Y0.385)2Si2O7 composition. The observed thermal quenching process could be characterized by the quenching temperature (T50%) of 526 K and its activation energy was determined to be 0.62 eV. Further considering the thermal quenching factors, it was found that the thermal quenching was caused by at least the thermal ionization and maybe also by classical thermal quenching. The light output and scintillation decay time were evaluated to be ~12,000 photons/MeV and ~42 ns, respectively. These results indicate that (Ce0.015La0.600Y0.385)2Si2O7 has a great potential for application in scintillation materials.

本文言語English
論文番号126252
ジャーナルJournal of Crystal Growth
572
DOI
出版ステータスPublished - 2021 10 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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