Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy

Daichi Tsukahara, Masakazu Baba, Kentaro Watanabe, Takashi Kimura, Kosuke O. Hara, Weijie Du, Noritaka Usami, Kaoru Toko, Takashi Sekiguchi, Takashi Suemasu

研究成果: Article

4 被引用数 (Scopus)

抄録

We grow a boron (B)-doped BaSi2 (0.7 μm)/undoped n-BaSi2 (1.7 μm) layered structure on a p-Si(111) substrate by molecular beam epitaxy, and observe the cross-sectional potential profile across the junction by Kelvin probe force microscopy (KFM). The potential increases when the KFM tip is moved from the B-doped BaSi2 to the n-BaSi2, and decreases in the p-Si. Inflection points are clearly observed in the potential profile at the Bdoped BaSi2/n-BaSi2 and n-BaSi2/p-Si interfaces. Secondary ion mass spectrometry reveals that B atoms scarcely diffuse to the n-BaSi2 layer. These results show the formation of a pn junction at the B-doped BaSi2/n-BaSi2.

本文言語English
論文番号030306
ジャーナルJapanese journal of applied physics
54
3
DOI
出版ステータスPublished - 2015 3 1
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Cross-sectional potential profile across a BaSi<sub>2</sub> pn junction by Kelvin probe force microscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル