TY - JOUR
T1 - Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET
AU - Sasaki, Taro
AU - Endoh, Tetsuo
N1 - Funding Information:
This work has been supported by a grant from "Three-Dimensional Integrated Circuits Technology Based on Vertical BC-MOSFET and Its Advanced Application Exploration" (Research Director: Professor Tetsuo Endoh, Program Manager: Toru Masaoka) of "Accelerated Innovation Research Initiative Turning Top Science and Ideas into High-Impact Values (ACCEL)" under the Japan Science and Technology Agency (JST) Grant Number JPMJAC1301, the program on Open Innovation Platform with Enterprises, Research Institute and Academia (OPERA) from JST, and VLSI Design and Education Center (VDEC), The University of Tokyo in collaboration with Synopsys Corporation.
Funding Information:
This work has been supported by a grant from “Three-Dimensional Integrated Circuits Technology Based on Vertical BC-MOSFET and Its Advanced Application Exploration” (Research Director: Professor Tetsuo Endoh, Program Manager: Toru Masaoka) of “Accelerated Innovation Research Initiative Turning Top Science and Ideas into High-Impact Values (ACCEL)” under the Japan Science and Technology Agency (JST) Grant Number JPMJAC1301, the program on Open Innovation Platform with Enterprises, Research Institute and Academia (OPERA) from JST, and VLSI Design and Education Center (VDEC), The University of Tokyo in collaboration with Synopsys Corporation.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/4
Y1 - 2018/4
N2 - In this paper, from the viewpoint of cell size and sensing margin, the impact of a novel cross-point-type one transistor and one magnetic tunnel junction (1T-1MTJ) spin-transfer-torque magnetoresistive random access memory (STT-MRAM) cell with a multi-pillar vertical body channel (BC) MOSFET is shown for high density and wide sensing margin STT-MRAM, with a 10ns writing period and 1.2 V VDD. For that purpose, all combinations of n/p-type MOSFETs and bottom/top-pin MTJs are compared, where the diameter of MTJ (DMTJ) is scaled down from 55 to 15nm and the tunnel magnetoresistance (TMR) ratio is increased from 100 to 200%. The results show that, benefiting from the proposed STT-MRAM cell with no back bias effect, the MTJ with a high TMR ratio (200%) can be used in the design of smaller STT-MRAM cells (over 72.6% cell size reduction), which is a difficult task for conventional planar MOSFET based design.
AB - In this paper, from the viewpoint of cell size and sensing margin, the impact of a novel cross-point-type one transistor and one magnetic tunnel junction (1T-1MTJ) spin-transfer-torque magnetoresistive random access memory (STT-MRAM) cell with a multi-pillar vertical body channel (BC) MOSFET is shown for high density and wide sensing margin STT-MRAM, with a 10ns writing period and 1.2 V VDD. For that purpose, all combinations of n/p-type MOSFETs and bottom/top-pin MTJs are compared, where the diameter of MTJ (DMTJ) is scaled down from 55 to 15nm and the tunnel magnetoresistance (TMR) ratio is increased from 100 to 200%. The results show that, benefiting from the proposed STT-MRAM cell with no back bias effect, the MTJ with a high TMR ratio (200%) can be used in the design of smaller STT-MRAM cells (over 72.6% cell size reduction), which is a difficult task for conventional planar MOSFET based design.
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U2 - 10.7567/JJAP.57.04FN09
DO - 10.7567/JJAP.57.04FN09
M3 - Article
AN - SCOPUS:85044457633
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04FN09
ER -