44 被引用数 (Scopus)

抄録

We study the spin-orbit torque induced magnetization switching in W/CoFeB/MgO heterostructures with W deposited under different sputtering conditions. We show that the crystal structure and resistivity of W depend on the employed sputtering conditions. Switching current of nanoscale devices is smaller while effective anisotropy field is larger for the devices with more resistive W channel deposited at lower sputtering power and higher Ar gas pressure. The effective spin Hall angle evaluated from the switching probability varies by a factor of 2-3 depending on the W resistivity controlled by the sputtering conditions.

本文言語English
論文番号192405
ジャーナルApplied Physics Letters
109
19
DOI
出版ステータスPublished - 2016 11 7

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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