Covalent nature in la-silicate gate dielectrics for oxygen vacancy removal

Takamasa Kawanago; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Hiroshi Iwai

doi:10.1109/LED.2011.2178111

Covalent nature in la-silicate gate dielectrics for oxygen vacancy removal

Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

This letter focuses on studying the characteristic behavior of oxygen in La-silicate dielectrics by comparison with HfO ₂ dielectrics. V _FB shift of La-silicate caused by oxygen annealing is found to be stable even after reduction annealing unlike with HfO ₂. Moreover, reduced gate leakage current and improved effective mobility of nMOSFETs with La-silicate are observed by oxygen incorporation, suggesting the annihilation of oxygen vacancy. Since the oxygen in La-silicate covalently exists adjacent to the Si atom, stability of oxygen in La-silicate can be understood in terms of strong bonding of covalent nature.

本文言語	English
論文番号	6129473
ページ（範囲）	423-425
ページ数	3
ジャーナル	IEEE Electron Device Letters
巻	33
号	3
DOI	https://doi.org/10.1109/LED.2011.2178111
出版ステータス	Published - 2012 3
外部発表	はい

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

文献へのアクセス

10.1109/LED.2011.2178111

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引用スタイル

@article{b02c0dbe50574b9985b00b845c23f487,

title = "Covalent nature in la-silicate gate dielectrics for oxygen vacancy removal",

abstract = "This letter focuses on studying the characteristic behavior of oxygen in La-silicate dielectrics by comparison with HfO 2 dielectrics. V FB shift of La-silicate caused by oxygen annealing is found to be stable even after reduction annealing unlike with HfO 2. Moreover, reduced gate leakage current and improved effective mobility of nMOSFETs with La-silicate are observed by oxygen incorporation, suggesting the annihilation of oxygen vacancy. Since the oxygen in La-silicate covalently exists adjacent to the Si atom, stability of oxygen in La-silicate can be understood in terms of strong bonding of covalent nature.",

keywords = "Covalent nature, HfO, La-silicate, high-k gate dielectrics, ionic nature, oxygen vacancy",

author = "Takamasa Kawanago and Kuniyuki Kakushima and Parhat Ahmet and Kazuo Tsutsui and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and Takeo Hattori and Hiroshi Iwai",

year = "2012",

month = mar,

doi = "10.1109/LED.2011.2178111",

language = "English",

volume = "33",

pages = "423--425",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Covalent nature in la-silicate gate dielectrics for oxygen vacancy removal

AU - Kawanago, Takamasa

AU - Kakushima, Kuniyuki

AU - Ahmet, Parhat

AU - Tsutsui, Kazuo

AU - Nishiyama, Akira

AU - Sugii, Nobuyuki

AU - Natori, Kenji

AU - Hattori, Takeo

AU - Iwai, Hiroshi

PY - 2012/3

Y1 - 2012/3

N2 - This letter focuses on studying the characteristic behavior of oxygen in La-silicate dielectrics by comparison with HfO 2 dielectrics. V FB shift of La-silicate caused by oxygen annealing is found to be stable even after reduction annealing unlike with HfO 2. Moreover, reduced gate leakage current and improved effective mobility of nMOSFETs with La-silicate are observed by oxygen incorporation, suggesting the annihilation of oxygen vacancy. Since the oxygen in La-silicate covalently exists adjacent to the Si atom, stability of oxygen in La-silicate can be understood in terms of strong bonding of covalent nature.

AB - This letter focuses on studying the characteristic behavior of oxygen in La-silicate dielectrics by comparison with HfO 2 dielectrics. V FB shift of La-silicate caused by oxygen annealing is found to be stable even after reduction annealing unlike with HfO 2. Moreover, reduced gate leakage current and improved effective mobility of nMOSFETs with La-silicate are observed by oxygen incorporation, suggesting the annihilation of oxygen vacancy. Since the oxygen in La-silicate covalently exists adjacent to the Si atom, stability of oxygen in La-silicate can be understood in terms of strong bonding of covalent nature.

KW - Covalent nature

KW - HfO

KW - La-silicate

KW - high-k gate dielectrics

KW - ionic nature

KW - oxygen vacancy

UR - http://www.scopus.com/inward/record.url?scp=84857452307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857452307&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2178111

DO - 10.1109/LED.2011.2178111

M3 - Article

AN - SCOPUS:84857452307

VL - 33

SP - 423

EP - 425

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 3

M1 - 6129473

ER -