Covalent nature in la-silicate gate dielectrics for oxygen vacancy removal

Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai

研究成果: Article査読

3 被引用数 (Scopus)

抄録

This letter focuses on studying the characteristic behavior of oxygen in La-silicate dielectrics by comparison with HfO 2 dielectrics. V FB shift of La-silicate caused by oxygen annealing is found to be stable even after reduction annealing unlike with HfO 2. Moreover, reduced gate leakage current and improved effective mobility of nMOSFETs with La-silicate are observed by oxygen incorporation, suggesting the annihilation of oxygen vacancy. Since the oxygen in La-silicate covalently exists adjacent to the Si atom, stability of oxygen in La-silicate can be understood in terms of strong bonding of covalent nature.

本文言語English
論文番号6129473
ページ(範囲)423-425
ページ数3
ジャーナルIEEE Electron Device Letters
33
3
DOI
出版ステータスPublished - 2012 3
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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