Coupled Monte Carlo-Energy Relaxation analysis of hot-carrier light emission in MOSFET's

Hiroyuki Kurino, Hiroyuki Kiba, Hiroki Mori, Shin Yokoyama, Ken Yamaguchi, Mitsumasa Koyanagi

研究成果: Paper査読

1 被引用数 (Scopus)

抄録

We develop the new two-dimensional device simulator to analyze the hot carrier light emission for the first time. The new calculation algorithm of coupled Monte Carlo-Energy Relaxation analysis is employed to obtain the carrier temperature distribution and the carrier energy distribution at the fast computation turn-around time. We can easily obtain the relation between the hot carrier energy and the light emission characteristics by using this simulator. The excellent agreement between the simulated and experimental results is obtained. It is found from the comparison between the simulated and experimental results that the hot carrier energy distribution can not be described by Maxwell-Boltzmann distribution.

本文言語English
ページ459-461
ページ数3
DOI
出版ステータスPublished - 1991
イベント23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
継続期間: 1991 8 271991 8 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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