Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+graphene FETs with ballistic injection

V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+ graphene field-effect transistors (G-FETs). The instability is associated with the Coulomb drag of the quasi-equilibrium electrons in the gated channel by the injected ballistic electrons resulting in a positive feedback between the amplified dragged electrons current and the injected current. The plasma excitations arise when the drag effect is sufficiently strong. The drag efficiency and the plasma frequency are determined by the quasi-equilibrium electron Fermi energy (i.e., by their density). The conditions of the terahertz plasma oscillation self-excitation can be realized in the G-FETs with realistic structural parameters at room temperature enabling the potential G-FET-based radiation sources for THz applications.

本文言語English
論文番号093501
ジャーナルApplied Physics Letters
119
9
DOI
出版ステータスPublished - 2021 8月 30

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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