Correlation between ZnO nanowire growth and the surface of AlN substrate

Sang Hyun Lee, In Ho Im, Hyun Jung Lee, Zahra Vashaei, Takashi Hanada, Meoung Whan Cho, Takafumi Yao

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Single-crystalline ZnO nanowires are fabricated by thermal chemical vapor transport and condensation on AlN epilayers without employing any metal catalyst. Before the growth of ZnO nanowires, the surface of AlN epilayers was treated by HF solution and then changed to a mixture of flat plane and hillocks according to dipping time. ZnO nanowires along the c-axis direction of hexagonal structures were synthesized only on the HF treated AlN surface. ZnO nanowire arrays have been obtained by selective etching by photolithography process. A mechanism for nanowire growth on modified AlN epilayer is proposed.

本文言語English
ページ(範囲)2640-2642
ページ数3
ジャーナルCrystal Growth and Design
6
12
DOI
出版ステータスPublished - 2006 12月 1

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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