Correlation between photoluminescence and surface-state density on gaas surfaces subjected to various surface treatments

Hideki Hasegawa, Toshiya Saitoh, Seiichi Konishi, Hirotatsu Ishii, Hideo Ohno

研究成果: Article

27 引用 (Scopus)

抜粋

Relationship between band edge photoluminescence (PL) and surface states is rigorously analyzed on computer, using the disorder-induced gap state (DIGS) model, and is compared with experiments on GaAs surfaces subjected to various treatments. It is shown that PL intensity is directly correlated with the effective surface recombination velocity, but is not necessarily directly correlated with the surface-state density (Nss) itself. PL enhancement by photochemical oxidation and by Na2S deposition is proposed to be due to a fixed negative charge, whereas photochemical treatment in HCl leads to significant reduction in Nss.

元の言語English
ページ(範囲)L2177-L2179
ジャーナルJapanese journal of applied physics
27
発行部数11 A
DOI
出版物ステータスPublished - 1988 11
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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