Correlation between photoluminescence and surface-state density on gaas surfaces subjected to various surface treatments

Hideki Hasegawa, Toshiya Saitoh, Seiichi Konishi, Hirotatsu Ishii, Hideo Ohno

研究成果: Article査読

28 被引用数 (Scopus)

抄録

Relationship between band edge photoluminescence (PL) and surface states is rigorously analyzed on computer, using the disorder-induced gap state (DIGS) model, and is compared with experiments on GaAs surfaces subjected to various treatments. It is shown that PL intensity is directly correlated with the effective surface recombination velocity, but is not necessarily directly correlated with the surface-state density (Nss) itself. PL enhancement by photochemical oxidation and by Na2S deposition is proposed to be due to a fixed negative charge, whereas photochemical treatment in HCl leads to significant reduction in Nss.

本文言語English
ページ(範囲)L2177-L2179
ジャーナルJapanese journal of applied physics
27
11 A
DOI
出版ステータスPublished - 1988 11月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Correlation between photoluminescence and surface-state density on gaas surfaces subjected to various surface treatments」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル