Correlation between current-voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition

Kenji Shiojima; Tetsuya Suemitsu

doi:10.1116/1.1547735

Correlation between current-voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition

研究成果: Article › 査読

本文言語	English
ページ（範囲）	698-705
ページ数	8
ジャーナル	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
巻	21
号	2
DOI	https://doi.org/10.1116/1.1547735
出版ステータス	Published - 2003
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1116/1.1547735

他のファイルとリンク

引用スタイル

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