Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

Kenji Shiojima, Tetsuya Suemitsu, Mitsumasa Ogura

研究成果: Article査読

39 被引用数 (Scopus)

抄録

We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×1017cm-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.

本文言語English
ページ(範囲)3636-3638
ページ数3
ジャーナルApplied Physics Letters
78
23
DOI
出版ステータスPublished - 2001 6 4
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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