Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

Y. Saito, M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, N. Tezuka

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - tMgO plot (RA: resistance area product, tMgO: thickness of MgO tunnel barrier) in CoFe/MgO/n+-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (P S i) in Si. The estimated absolute values of P S i using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. To demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/n+-Si junction electrode is important.

本文言語English
論文番号17C707
ジャーナルJournal of Applied Physics
117
17
DOI
出版ステータスPublished - 2015 5月 7

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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