Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films

L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, A. Hirohata

研究成果: Article査読

21 被引用数 (Scopus)

抄録

Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure.

本文言語English
論文番号024401
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
87
2
DOI
出版ステータスPublished - 2013 1 2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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