Controls over structural and electronic properties of epitaxial graphene on silicon using surface termination of 3C-SiC(111)/Si

Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito, Maki Suemitsu

研究成果: Article査読

37 被引用数 (Scopus)

抄録

Epitaxial graphene on Si (GOS) using a heteroepitaxy of 3C-SiC/Si has attracted recent attention owing to its capability to fuse graphene with Sibased electronics. We demonstrate that the stacking, interface structure, and hence, electronic properties of GOS can be controlled by tuning the surface termination of 3C-SiC(111)/Si, with a proper choice of Si substrate and SiC growth conditions. On the Si-terminated 3C-SiC(111)/Si(111) surface, GOS is Bernal-stacked with a band splitting, while on the C-terminated 3C-SiC(111)/Si(110) surface, GOS is turbostratically stacked without a band splitting. This work enables us to precisely control the electronic properties of GOS for forthcoming devices.

本文言語English
論文番号115104
ジャーナルApplied Physics Express
4
11
DOI
出版ステータスPublished - 2011 11

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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