Controlling planar defects in 3C–SiC: Ways to wake it up as a practical semiconductor

Hiroyuki Nagasawa, Ramya Gurunathan, Maki Suemitsu

研究成果: Conference contribution

9 引用 (Scopus)

抜粋

Eelectrically active defects in 3C–SiC are investigated by considering the structures and interactions of planar defects. An anti-phase boundary (APB) largely degrades the blocking property of semiconductor devices due to its semimetallic nature. Although APBs can be eliminated by orienting the specific polar face of 3C-SiC along a particular direction, stacking faults (SFs) cannot be eliminated due to Shockley-type partial dislocation glide. SFs with Shockley-type partial dislocations form a trapezoidal plate which expands the Si-terminated surface with increasing 3CSiC thickness. Although the density of SFs can be reduced by counter termination, specific cross junctions between a pair of counter SFs forms a forest dislocation, and this is regarded as an electrically active defect. This paper proposes an effective way to suppress the forest dislocations and APBs which nucleate during 3C-SiC growth.

元の言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2014
編集者Didier Chaussende, Gabriel Ferro
出版者Trans Tech Publications Ltd
ページ108-114
ページ数7
ISBN(印刷物)9783038354789
DOI
出版物ステータスPublished - 2015 1 1
イベントEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
継続期間: 2014 9 212014 9 25

出版物シリーズ

名前Materials Science Forum
821-823
ISSN(印刷物)0255-5476
ISSN(電子版)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
France
Grenoble
期間14/9/2114/9/25

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • これを引用

    Nagasawa, H., Gurunathan, R., & Suemitsu, M. (2015). Controlling planar defects in 3C–SiC: Ways to wake it up as a practical semiconductor. : D. Chaussende, & G. Ferro (版), Silicon Carbide and Related Materials 2014 (pp. 108-114). (Materials Science Forum; 巻数 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.108