Controlling fluorine concentration of fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi

研究成果: Article査読

29 被引用数 (Scopus)

抄録

Control of the fluorine to carbon (F/C) ratio of fluorinated amorphous carbon (a-C:F) thin films by changing the deposition pressure is investigated. Decreasing the deposition pressure increases the dissociation of the source fluorocarbon material in the plasma, causing a decrease in the F/C ratio of the deposited film. There is a tradeoff relationship between the dielectric constant and the thermal stability. Both the thermal stability and the dielectric constant of the a-C:F films are increased as the F/C ratio is decreased. Thus, the tradeoff relationship between them can be optimized by the pressure during deposition.

本文言語English
ページ(範囲)L1531-L1533
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
36
11 SUPPL. B
DOI
出版ステータスPublished - 1997 11月 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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