Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

Takeaki Yajima, Yasuyuki Hikita, Makoto Minohara, Christopher Bell, Julia A. Mundy, Lena F. Kourkoutis, David A. Muller, Hiroshi Kumigashira, Masaharu Oshima, Harold Y. Hwang

研究成果: Article

31 引用 (Scopus)

抜粋

The concept 'the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.

元の言語English
記事番号6759
ジャーナルNature communications
6
DOI
出版物ステータスPublished - 2015 4 13

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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    Yajima, T., Hikita, Y., Minohara, M., Bell, C., Mundy, J. A., Kourkoutis, L. F., Muller, D. A., Kumigashira, H., Oshima, M., & Hwang, H. Y. (2015). Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces. Nature communications, 6, [6759]. https://doi.org/10.1038/ncomms7759