Controlled carbonization of Si(001) surface using hydrocarbon radicals in ultrahigh vacuum

Tomoaki Hatayama, Yoichiro Tarui, Tastuo Yoshinobu, Takashi Fuyuki, Hiroyuki Matsunami

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Carbonization of a Si(001) surface by hydrocarbon radicals is obtained in an ultrahigh vacuum at 750°C. Hydrocarbon gases such as C3H8, C2H6 and CH4 are decomposed by thermal cracking, and generated radical species are investigated by quadrupole mass analysis. The thickness of carbonized layer is controlled easily by cracking temperature and exposure time, and very smooth surfaces are obtained. The differences in the cases of various hydrocarbon sources are discussed in detail.

本文言語English
ページ(範囲)333-337
ページ数5
ジャーナルJournal of Crystal Growth
136
1-4
DOI
出版ステータスPublished - 1994 3月 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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