Controllable remanent states on microstructured magnetic tunnel junction rings

C. C. Chen, C. T. Chao, C. Y. Kuo, Lance Horng, Teho Wu, G. Chern, C. Y. Huang, S. Isogami, M. Tsunoda, M. Takahashi, J. C. Wu

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.

本文言語English
ページ(範囲)2824-2826
ページ数3
ジャーナルIEEE Transactions on Magnetics
43
6
DOI
出版ステータスPublished - 2007 6

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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