Controllable modification of self-assembled monolayer surface by using N2 neutral beam process

Yasushi Ishikawa, Keiji Okumura, Takao Ishida, Seiji Samukawa

研究成果: Article査読

1 被引用数 (Scopus)

抄録

A novel technique of low-energy N2 neutral beam (NB) (<10 eV) irradiation was investigated as a means of controlling the surface nitridation of self-assembled monolayers (SAMs). This low-energy process without UV photons was able to nitride the surfaces of terphenyl SAMs. Furthermore, by varying the on/off period for irradiation, a pulse-time modulated NB process could be used to control the atomic ratio of nitrogen in terphenyl molecules. Time-of-flight secondary ion mass spectra revealed that one H in the terphenyl group was substituted by a NH2 group because of irradiation by the N2 beam. The data suggested that the low-energy NB technique caused less damage to modified surfaces than the conventional plasma process did. Therefore, we believe that it is a potential damage-free process for modifying the surfaces of soft organic materials and films.

本文言語English
論文番号094320
ジャーナルJournal of Applied Physics
105
9
DOI
出版ステータスPublished - 2009 6月 22

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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