Control of ZnO (0001)/Al2O3 (1120) surface morphologies using plasma-assisted molecular beam epitaxy

Huaizhe Xu, Keita Ohtani, Miyuki Yamao, Hideo Ohno

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The surface morphologies of ZnO thin films grown on Al2O 3 (112̄0) (a-plane sapphire) substrate by plasma-assisted molecular beam epitaxy (PAMBE) were systematically investigated by in situ reflection high energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM) as a function of Zn beam flux intensity and substrate temperature. The ZnO films are uniquely (0001̄) oriented with no trace of secondary orientation. A phase diagram for ZnO growth was established, which described the ZnO growth mode transition at fixed O2 flow rate of 0.3 seem. For the growth at 750°C with Zn beam flux of 3.6 × 10 -7 Torr, the RHEED showed a (3 × 3) pattern and a smooth surface represented by atomically flat terraces and half unit cell high steps (∼0.26 nm, a charge neutral unit of ZnO) was observed corresponding to a monolayer or bilayer thickness of Zn-O along the c-axis of (0001̄) ZnO.

本文言語English
ページ(範囲)773-777
ページ数5
ジャーナルPhysica Status Solidi (B) Basic Research
243
4
DOI
出版ステータスPublished - 2006 3月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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