Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy

Y. Ohno, T. Taishi, I. Yonenaga, S. Ichikawa, R. Hirai, S. Takeda

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Pseudomorphic ZnSe layers on GaAs(0 0 1) were grown by molecular beam epitaxy under the light illumination with photon energy of about 1.8 eV. In the layers, isolated Shockley-type stacking faults on (1 1 1), bordering not on the ZnSe/GaAs interface but on the ZnSe surface, as well as the well-known stacking fault pairs, were formed. The sum of the stacking fault areas was small in comparison with the layers grown by molecular beam epitaxy without light illumination.

本文言語English
ページ(範囲)650-653
ページ数4
ジャーナルPhysica B: Condensed Matter
401-402
DOI
出版ステータスPublished - 2007 12月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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