Control of selective tungsten chemical vapor deposition by monolayer nitridation of silicon surface

Seiichi Takami, Takeyasu Saito, Minoru Fujii, Yasuyuki Egashira, Hiroshi Komiyama

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Selective tungsten chemical vapor deposition was carried out on three kinds of substrates: hydrogen-terminated silicon (H-Si), monolayer nitrided silicon (N-Si), and thermally grown silicon oxide. X-ray photoelectron spectroscopy (XPS) confirmed that the H-Si substrates differ from the N-Si substrates only by the monolayer of nitride on their surface. Field-emission scanning electron spectroscopy and XPS showed that tungsten does not deposit on the N-Si substrates but does deposit on the H-Si substrates. Monolayer nitridation therefore has the potential for improving and optimizing the thin-film preparation processes, because it provides a means for altering the surface reactivity while keeping the bulk properties unchanged.

本文言語English
ページ(範囲)L38-L40
ジャーナルJournal of the Electrochemical Society
143
2
DOI
出版ステータスPublished - 1996 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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