TY - JOUR
T1 - Control of magnetization reversal in ferromagnetic semiconductors by electrical means
AU - Chiba, Daichi
AU - Yamanouchi, Michihiko
AU - Matsukura, Fumihiro
AU - Ohno, Hideo
PY - 2004/12/8
Y1 - 2004/12/8
N2 - A new scheme of magnetization reversal, an electrically assisted magnetization reversal, is realized in a carrier-induced ferromagnetic semiconductor (In, Mn)As structure. The demonstration has been done with field-effect transistors (FETs) having a thin (In, Mn)As channel by the application of a gate electric field to control the hole concentration p.
AB - A new scheme of magnetization reversal, an electrically assisted magnetization reversal, is realized in a carrier-induced ferromagnetic semiconductor (In, Mn)As structure. The demonstration has been done with field-effect transistors (FETs) having a thin (In, Mn)As channel by the application of a gate electric field to control the hole concentration p.
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U2 - 10.1088/0953-8984/16/48/029
DO - 10.1088/0953-8984/16/48/029
M3 - Article
AN - SCOPUS:10444263065
VL - 16
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 48
ER -